微信内可能无法直接打开本站。请点右上角 ··· → 在浏览器打开，或复制链接。
M3D 6T SRAM With BEOL Pass-Gates at 2nm (Georgia Tech, Synopsys)
RSS 官方收录 · 可信分层展示
关键摘要
Researchers from Georgia Institute of Technology and Synopsys published a technical paper titled “A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node.…
- ” Abstract Excerpt: The paper proposes “a monolithic-3D (M3D) 6T SRAM …
- It also reports that the resulting cell “achieves a 25% footprint redu…
- 2% at the subarray level.
摘要引擎：抽取
正文提要
Researchers from Georgia Institute of Technology and Synopsys published a technical paper titled “A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node.”
Abstract Excerpt: The paper proposes “a monolithic-3D (M3D) 6T SRAM at the 2nm node” that integrates BEOL IGO pass-gates with an all-silicon nanosheet latch, buried power rails, and Ru interconnects. It also reports that the resulting cell “achieves a 25% footprint reduction” versus a high-performance silicon baseline and reduces write delay by 42.2% at the subarray level.
Find the technical paper here. August 2026.
Wang, Po-Chuan, Dongwon Jang, Eknath Sarkar, Alexei Svizhenko, Md. Nahid Haque Shazon, Piyush Kumar, Suman Datta, and Azad Naeemi. “A Process-Aware Hybrid Si/IGO Monolithic-3D 6T SRAM with BEOL Pass-Gates for the 2nm Node.” arXiv, August 2026. https://doi.org/10.48550/arXiv.2608.22741.
The post M3D 6T SRAM With BEOL Pass-Gates at 2nm (Georgia Tech, Synopsys) appeared first on Semiconductor Engineering.