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Aggregate Semiconductor Engineering 芯片半导体 27 Aug 2026 - 16:31

Full-Fidelity Thermal Simulation at Floorplanning Speed for 2.5D AI Accelerator Packages

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关键摘要

Power densities in modern AI accelerators and HPC devices now routinely exceed 1 W/mm².At the same time, 2.…

  • 5D packages co-integrate high-power accelerator ASICs (e.
  • , NVIDIA, AMD) with 8–16 High Bandwidth Memory (HBM) stacks (e.
  • , Micron, Samsung, SK Hynix), pushing system-level thermal behavior to…

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正文提要

Power densities in modern AI accelerators and HPC devices now routinely exceed 1 W/mm². At the same time, 2.5D packages co-integrate high-power accelerator ASICs (e.g., NVIDIA, AMD) with 8–16 High Bandwidth Memory (HBM) stacks (e.g., Micron, Samsung, SK Hynix), pushing system-level thermal behavior to fundamental limits.

These components are designed and optimized independently. Their thermal interaction is determined only at integration, through floorplanning on a shared silicon interposer. This creates a critical coupling problem: localized ASIC hotspots conduct laterally into adjacent HBM stacks, elevating junction temperatures beyond safe limits. The result is reduced operating frequency, performance throttling, and accelerated memory degradation.

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Fig.1: Steady-state temperature map across 8 HBM stacks (4 per ASIC) and 2 ASICs at maximum TDP; Tj ≈ 100 °C at HBM. Source: Vinci

The post Full-Fidelity Thermal Simulation at Floorplanning Speed for 2.5D AI Accelerator Packages appeared first on Semiconductor Engineering.

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